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AFT09MS031NR1 Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc |
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AFT09MS031NR1 Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc |
4 / 21 page 4 RF Device Data Freescale Semiconductor, Inc. AFT09MS031NR1 AFT09MS031GNR1 TYPICAL CHARACTERISTICS 20 1 100 010 5 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 15 10 0 5 4 2 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 3. Drain Current versus Drain--Source Voltage 6 2 VGS =4.0 Vdc Note: Measured with both sides of the transistor tied together. 4 3 1 10 812 16 14 18 20 TA =25°C 2.5 Vdc 0 Crss Ciss Coss 300 6 7 8 9 3.0 Vdc 3.25 Vdc 3.5 Vdc 250 109 90 TJ, JUNCTION TEMPERATURE (°C) Figure 4. MTTF versus Junction Temperature -- CW Note: MTTF value represents the total cumulative operating time under indicated test conditions. 107 106 104 110 130 150 170 190 210 230 108 105 VDD = 13.6 Vdc ID =2.6 Amps 3.2 Amps 3.9 Amps Measured with ±30 mV(rms)ac @ 1 MHz VGS =0 Vdc |
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