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EN29LV320C Datasheet(HTML) 19 Page - Eon Silicon Solution Inc.

Part No. EN29LV320C
Description  32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29LV320C Datasheet(HTML) 19 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
© 2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
19
EN29LV320C
Rev. B, Issue Date: 2011/05/13
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following a Sector Erase Suspend command, Sector Erase Suspend mode is entered. The system can
read array data using the standard read timings from sectors other than the one which is being erase-
suspended. If the system reads at an address within erase-suspended sectors, the device outputs
status data. After completing a programming operation in the Sector Erase Suspend mode, the system
may once again read array data with the same exception.
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high
during an active program or erase operation or while in the autoselect mode. See next section for
details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t-
care for this command.
The reset command may be written between the cycle sequences in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however, the
device ignores reset commands until the operation is complete. The reset command may be written
between the sequence cycles in a program command sequence before programming begins. This
resets the device to reading array data (also applies to programming in Sector Erase Suspend mode).
Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the cycle sequences in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to reading array data.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
reading array data (also applies in Sector Erase Suspend mode).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices ID
codes, and determine whether or not a sector (group) is protected. The Command Definitions table
shows the address and data requirements. This is an alternative to the method that requires V
B
ID
B
on
address bit A9 and is intended for commercial programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 9 any number
of times, without needing another command sequence.
The system must write the reset command to exit the autoselect mode and return to reading array
data.
Word / Byte Programming Command
The device can be programmed by byte or by word, depending on the state of the BYTE# Pin.
Programming the EN29LV320C is performed by using a four-bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer
terminates the program operation automatically. Address is latched on the falling edge of CE# or WE#,
whichever is last; data is latched on the rising edge of CE# or WE#, whichever is first.


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