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EN29LV320C Datasheet(PDF) 35 Page - Eon Silicon Solution Inc.

Part # EN29LV320C
Description  32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29LV320C Datasheet(HTML) 35 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
© 2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
35
EN29LV320C
Rev. B, Issue Date: 2011/05/13
AC CHARACTERISTICS
Table 19. Write (Erase/Program) Operations
Parameter
Symbols
Speed
JEDEC
Standard
Description
-70
Unit
t
B
AVAV
B
t
B
WC
B
Write Cycle Time
Min
70
ns
t
B
AVWL
B
t
B
AS
B
Address Setup Time
Min
0
ns
t
B
WLAX
B
t
B
AH
B
Address Hold Time
Min
45
ns
t
B
DVWH
B
t
B
DS
B
Data Setup Time
Min
30
ns
t
B
WHDX
B
t
B
DH
B
Data Hold Time
Min
0
ns
t
B
OES
B
Output Enable Setup Time
Min
0
ns
t
B
GHWL
B
t
B
GHWL
B
Read Recovery Time before
Write (OE# High to WE# Low)
Min
0
ns
t
B
ELWL
B
t
B
CS
B
CE# Setup Time
Min
0
ns
t
B
WHEH
B
t
B
CH
B
CE# Hold Time
Min
0
ns
t
B
WLWH
B
t
B
WP
B
Write Pulse Width
Min
45
ns
t
B
WHDL
B
t
B
WPH
B
Write Pulse Width High
Min
20
ns
Byte
Typ
8
t
B
WHW1
B
t
B
WHWH1
B
Programming
Operation
Word
Typ
8
µs
t
B
WHW1
B
t
B
WHWH1
B
Accelerated Programming
Operation
(Word AND Byte Mode)
Typ
7
µs
Sector Erase Operation
Typ
0.1
s
t
B
WHW2
B
t
B
WHWH2
B
Chip Erase Operation
Typ
8
s
t
B
VCS
B
Vcc Setup Time
Min
50
µs
t
B
BUSY
WE# High to RY/BY# Low
Max
70
ns
tRB
Recovery Time from RY/BY#
Min
0
ns
Notes:
tWC is Not 100% tested.


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