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Q67000-A9303 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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Q67000-A9303 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 14 page TLE 4206 Semiconductor Group 9 1998-02-01 Input RANGE Input current I RANGE – 1 – 1 µA0 V < V RANGE < VS Switch-OFF voltage High V OFFH – 100 0 100 mV refer to V S Switch-OFF voltage Low V OFFL 300 400 500 mV refer to GND Input CPB (Current Peak Blanking) Charge current I CPBCH –6.5 – µA V HYL > VHYST; V CPB = 0 V Low voltage V CPBL –20 100 mV V HYL < VHYST < V HYH High voltage threshold V CPBH 55.7 6.5 V V HYL > VHYST Clamp voltage V CPBC –6.2 – V V HYL > VHYST Blanking time t CPB –40 – ms C CPB = 47 nF Thermal Shutdown Thermal shutdown junction temperature T jSD 150 175 200 °C– Thermal switch-on junction temperature T jSO 120 – 170 °C– Temperature hysteresis ∆T –30 – K – Electrical Characteristics (cont’d) 8 V < V S < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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