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TLE4265 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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TLE4265 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
5 / 11 page TLE 4265 Semiconductor Group 5 1998-11-01 Optimum reliability and lifetime can be ensured in integrated circuits by not exceeding a junction temperature of 125 °C during operation. Although operation up to the maximum permissible junction temperature of 150 °C is possible, such boundary conditions, if sustained, may affect device reliability. Thermal Resistance Junction ambient R thja –70 K/W – Junction-case R thjc –10 K/W – Characteristics V I = 13.5 V; TJ = 25 °C (unless specified otherwise) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output voltage V Q 4.95 5.1V 5 mA ≤ I Q ≤ 150 mA 6 V ≤ V I ≤ 28 V – 40 °C ≤ T J ≤ 125 °C Output-current limiting I Q 200 250 – mA – Current consumption I q = II – IQ I q – 750 1000 µA I Q = 0 mA Current consumption I q = II – IQ I q – 1015mA I Q = 150 mA Current consumption I q = II – IQ I q – 1520mA I Q = 150 mA V I = 4.5 V Drop voltage V Dr – 0.35 0.5 V I Q = 150 mA 1) Load regulation ∆V Q –– 25 mV I Q = 5 to 150 mA Absolute Maximum Ratings (cont’d) T J = – 40 to 150 °C Parameter Symbol Limit Values Unit Notes min. max. |
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