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SP331ET Datasheet(PDF) 9 Page - Sipex Corporation |
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SP331ET Datasheet(HTML) 9 Page - Sipex Corporation |
9 / 13 page Date: 03-04-05 Programmable Dual RS-232/RS-485 Transceiver © Copyright 2005 Sipex Corporation 9 Figure 11. Charge Pump Phase 1. Figure 12. Charge Pump Phase 2. Figure 13. Charge Pump Phase 3. Figure 14. Charge Pump Phase 4. simultaneously with this, the positive side of capacitor C 1 is switched to +5V and the negative side is connected to ground, and the cycle begins again. Since both V+ and V– are separately generated from V CC in a no–load condition, V+ and V – will be symmetrical. Older charge pump approaches that generate V– from V+ will show a decrease in the magnitude of V– compared to V+ due to the inherent inefficiencies in the design. The clock rate for the charge pump typically operates at 15kHz. The external capacitors must be 0.1 µF with a 16V breakdown rating. External Power Supplies For applications that do not require +5V only, external supplies can be applied at the V+ and V– pins. The value of the external supply volt- ages must be no greater than ±l0V. The current drain for the ±10V supplies is used for RS-232. For the RS-232 driver the current requirement will be 3.5mA per driver. The external power supplies should provide a power supply se- quence of :+l0V, then +5V, followed by –l0V. VCC = +5V –5V –5V +5V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – VCC = +5V –10V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – VCC = +5V –5V +5V –5V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – VCC = +5V +10V VSS Storage Capacitor VDD Storage Capacitor C1 C2 C3 C4 + + ++ – – – – Figure 15. Charge Pump Waveforms +10V a) C 2+ GND GND -10V b) C 2- |
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