ELECTRICAL CHARACTERISTICS

DAC5662

over operating free-air temperature range, AVDD = DVDD = 3.3 V, IOUTFS = 20 mA, independent gain set mode (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DC Specifications

Resolution

12

Bits

INL

Integral nonlinearity

-2

0.3

2

LSB

DNL

Differential nonlinearity

-2

0.2

2

LSB

Analog Output

Offset error

0.03

%FSR

With external reference

±0.25

%FSR

Gain error

With internal reference

0.5

%FSR

2

mA

20

mA

Gain mismatch

With internal reference

-2

0.07

+2

%FSR

-1

1.25

V

Output resistance

300

k

Ω

Output capacitance

5

pF

Reference Output

Reference voltage

1.14

1.2

1.26

V

100

nA

Reference Input

Input voltage

0.1

1.25

V

Input resistance

1

M

Ω

Small signal bandwidth

300

kHz

Input capacitance

100

pF

Temperature Coefficients

ppm of

Offset drift

0

FSR/°C

ppm of

With external reference

50

FSR/°C

Gain drift

ppm of

With internal reference

50

FSR/°C

Reference voltage drift

20

ppm/°C

(1)

Measured differentially through 50

Ω to AGND.

(2)

Nominal full-scale current, IOUTFS, equals 32x the IBIAS current.

(3)

The lower limit of the output compliance is determined by the CMOS process. Exceeding this limit may result in transistor breakdown,

resulting in reduced reliability of the DAC5662 device. The upper limit of the output compliance is determined by the load resistors and

full-scale output current. Exceeding the upper limit adversely affects distortion performance and intergral nonlinearity.

(4)

Use an external buffer amplifier with high impedance input to drive any external load.

4

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