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BQ24765RUVR Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24765RUVR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 36 page  bq24765 www.ti.com SLUS999 – NOVEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) 7.0 V ≤ V(DCINA) ≤ 24 V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ADAPTER CURRENT SENSE AMPLIFIER VCSSP/N_OP Input common mode range Voltage on CSSP/CSSN 0 24 V VVICM VICM output voltage range 0 2 V IVICM VICM Output Current 0 1 mA AVICM Current sense amplifier voltage AVICM = VVICM/ VIREG_DPM 20 V/V gain VIREG_DPM = V(CSSP–CSSN) ≥ 40 mV –2% 2% VIREG_DPM = V(CSSP–CSSN) = 20 mV –3% 3% Adapter current sense accuracy VIREG_DPM = V(CSSP–CSSN) = 5 mV –25% 25% VIREG_DPM = V(CSSP–CSSN) = 1.5 mV –33% 33% IVICM_LIM Output current limit VVICM = 0 V 1 mA CVICM_MAX Maximum output load capacitance For stability with 0 mA to 1 mA load 100 pF ACIN COMPARATOR (Adapter Detect) VDCIN_VFB_OP Differential voltage from DCINA to –20 24 V VFB VACIN_CHG ACIN rising threshold Min voltage to enable charging, VACIN rising 2.376 2.40 2.424 V VACIN_CHG_HYS ACIN falling hysteresis VACIN falling 40 mV ACIN rising deglitch (1) VACIN rising 100 μs VACIN_BIAS Adapter present rising threshold Min voltage to enable all bias, VACIN rising 0.56 0.62 0.68 V VACIN_BIAS_HYS Adapter present falling hysteresis VACIN falling 20 mV V(DCIN–VFB) COMPARATOR (Reverse Discharging Protection) VDCIN-VFB_FALL DCIN to VFB falling threshold VDCIN – VVFB falling 140 185 240 mV VDCIN-VFB__HYS DCIN to VFB hysteresis 50 mV DCIN to VFB rising deglitch VDCIN – VVFB > VDCIN-VFB_RISE 1 ms VFB OVERVOLTAGE COMPARATOR VOV_RISE Over-voltage rising threshold As percentage of VVFB_REG 104% VOV_FALL Over-voltage falling threshold As percentage of VVFB_REG 102% VFB BATSHORT COMPARATOR (Undervoltage) VVFB_SHORT_RISE VFB short rising threshold 2.6 2.7 2.85 V VVFB_SHORT_HYS VFB short falling hysteresis 250 mV VVFB_SHORT_ICHG VFB short precharge current 60 220 mA VFB BATLOWV COMPARATOR VVFB_LOWV_RISE VFB LOWV rising threshold 3.9 4 4.1 V VVFB_LOWV_HYS VFB LOWV falling hysteresis 400 mV VFB LOWV one-shot reset time Time to time charger 2 ms VVFB_LOWV_ICHG VFB LOWV max DAC output VFB falling, on 10m Ω resistor 3 A CHARGE OVER-CURRENT COMPARATOR – Average current using sense resistor Charge overcurrent falling V(CSOP-CSON) > 33mV, as percentage of IREG_CHG 145% threshold Minimum current limit V(CSOP-CSON) < 33mV 50 mV Internal filter pole frequency 160 kHz CHARGE OVER-CURRENT COMPARATOR – Cycle-by-Cycle Maximum current using High-Side SenseFet Charge over-current rising VOCP_CycleByCycle threshold, latches off high-side High-side drain current rising-edge. 8 10 12 A MOSFET until next cycle. (1) Verified by design. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s) :bq24765 |
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