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CSD16327Q3 Datasheet(PDF) 5 Page - Texas Instruments |
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CSD16327Q3 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 11 page 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 −75 −25 25 75 125 175 TC - Case Temperature - ºC ID =24A VGS = 4.5V G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage - V TC = 25°C TC = 125°C G001 0.001 0.01 0.1 1 10 100 1000 2400 0.01 0.1 1 10 100 200 VDS - Drain-to-Source Voltage - V 1ms 10ms 100ms 1s DC Single Pulse Typical RthetaJA = 143ºC/W(min Cu) G001 5 10 100 0.01 0.1 1 10 t(AV) - Time in Avalanche - ms TC = 125°C TC = 25°C G001 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature - ºC G001 CSD16327Q3 www.ti.com SLPS371 – DECEMBER 2011 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs. Temperature Copyright © 2011, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): CSD16327Q3 |
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