CSD16403Q5A

SLPS201A – AUGUST 2009 – REVISED SEPTEMBER 2010

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

25

V

Drain to Source Leakage Current

1

mA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

1.2

1.6

1.9

V

2.9

3.7

m

Ω

Drain to Source On Resistance

2.2

2.8

m

Ω

Transconductance

91

S

Dynamic Characteristics

Input Capacitance

2040

2660

pF

Output Capacitance

1600

2080

pF

Reverse Transfer Capacitance

115

160

pF

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (4.5V)

13.3

18

nC

Gate Charge Gate to Drain

3.5

nC

Gate Charge Gate to Source

5.5

nC

Qg(th)

Gate Charge at Vth

3.1

nC

Output Charge

33

nC

Turn On Delay Time

11.8

ns

Rise Time

18.3

ns

Turn Off Delay Time

15.2

ns

Fall Time

9.2

ns

Diode Characteristics

Diode Forward Voltage

0.8

1.0

V

Reverse Recovery Charge

47

nC

Reverse Recovery Time

35

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

1.8

°C/W

51

°C/W

(1)

(2)

2

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