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CSD17527Q5A Datasheet(PDF) 1 Page - Texas Instruments |
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CSD17527Q5A Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = 11A 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 Qg - Gate Charge - (nC) ID = 11A VDD = 15V CSD17327Q5A www.ti.com SLPS332 – JUNE 2011 30V, N-Channel NexFET ™ Power MOSFETs Check for Samples: CSD17327Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.8 nC • Avalanche Rated VGS = 4.5V 12.5 m Ω RDS(on) Drain to Source On Resistance • Pb Free Terminal Plating VGS = 8V 9.9 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.6 V • Halogen Free • SON 5-mm × 6-mm Plastic Package Text Added For Spacing ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and • Point-of-Load Synchronous Buck in CSD17327Q5A 2500 Plastic Package Reel Reel Networking, Telecom and Computing Systems • Optimized for Control FET Applications Text Added For Spacing ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT The NexFET ™ power MOSFET has been designed VDS Drain to Source Voltage 30 V to minimize losses in power conversion applications. VGS Gate to Source Voltage +10 / -10 V Continuous Drain Current, TC = 25°C 65 A Top View ID Continuous Drain Current(1) 13 A IDM Pulsed Drain Current, TA = 25°C (2) 85 A PD Power Dissipation(1) 3 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 45 mJ ID = 30A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 44°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% Text 4 Spacing Text 4 Spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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