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CSD25303W1015 Datasheet(PDF) 4 Page - Texas Instruments |
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CSD25303W1015 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 10 page  0 1 2 3 4 5 6 7 8 9 0 0.5 1 1.5 2 − V DS - Drain-to-Source Voltage - V VGS = −1.8V VGS = −2.0V VGS = −2.5V VGS = −3.5V VGS = −4.5V 0 1 2 3 4 5 6 7 8 9 0.5 1 1.5 2 − V GS - Gate-to-Source Voltage - V TC = 125°C TC = 25°C TC = −55°C VDS = −5V 0 1 2 3 4 5 0 1 2 3 4 Qg - Gate Charge - nC (nC) ID = −1.5A VDD = −10V 0.01 0.1 1 10 0 5 10 15 20 − V DS - Drain-to-Source Voltage - V Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 0 0.2 0.4 0.6 0.8 1 −75 −25 25 75 125 175 TC - Case Temperature - ºC ID = −250µA 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 − V GS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = −1.5A CSD25303W1015 SLPS292 – JANUARY 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Threshold Voltage vs. Temperature Figure 7. On Resistance vs. Gate Voltage 4 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD25303W1015 |
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