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GRM155R61A105KE15 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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GRM155R61A105KE15 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MMA25312BT1 1 RF Device Data Freescale Semiconductor, Inc. Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components witha3to5voltsupply. Features • Frequency: 2300--2700 MHz • P1dB: 31 dBm @ 2500 MHz • Power Gain: 26 dB @ 2500 MHz • OIP3: 40 dBm @ 2500 MHz • Active Bias Control (On--chip) • Single 3 to 5 Volt Supply • Single--ended Power Detector • Cost--effective QFN Surface Mount Package • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. 2300--2700 MHz, 26 dB 31 dBm InGaP HBT MMA25312BT1 CASE 2131--01 QFN 3×3 PLASTIC Table 1. Typical CW Performance (1) Characteristic Symbol 2300 MHz 2500 MHz 2700 MHz Unit Small--Signal Gain (S21) Gp 26 26 24.5 dB Input Return Loss (S11) IRL --14 --12 --12 dB Output Return Loss (S22) ORL --11 --13 --15 dB Power Output @ 1dB Compression P1dB 30 31 29.8 dBm 1. VCC1 =VCC2 =VBIAS =5 Vdc, TA =25°C, 50 ohm system, CW Application Circuit Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 30 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. Table 3. Thermal Characteristics Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case Case Temperature 91°C, VCC1 =VCC2 =VBIAS =5 Vdc RθJC 92 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 © Freescale Semiconductor, Inc., 2012. All rights reserved. |
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