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THS6204IRHFTG4 Datasheet(PDF) 2 Page - Texas Instruments

Part # THS6204IRHFTG4
Description  Dual-Port, Differential VDSL2 Line Driver Amplifiers
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS6204IRHFTG4 Datasheet(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
THS6204
SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 ................................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
PACKAGE
PRODUCT(2)
PACKAGE-LEAD
DESIGNATOR
PACKAGE MARKING
TRANSPORT MEDIA, QUANTITY
THS6204IRHFT
Tape and Reel, 250
QFN-24
RHF
6204
THS6204IRHFR
Tape and Reel, 3000
THS6204IPWP
Rails, 60
TSSOP-24
PWP
THS6204
THS6204IPWPR
Tape and Reel, 2000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
The PowerPAD is electrically isolated from all other pins.
Over operating free-air temperature range, unless otherwise noted.
THS6204
UNIT
Supply voltage, VS– to VS+
28
V
Input voltage, VI
±VS
Differential input voltage, VID
±2
V
Output current, IO—static dc
(2)
±100
mA
Continuous power dissipation
See Dissipation Ratings table
Maximum junction temperature, any condition, TJ
(3)
+150
°C
Maximum junction temperature, continuous operation, long-term reliability, TJ
(4), QFN
+130
°C
package
Maximum junction temperature, continuous operation, long-term reliability, TJ
(4), TSSOP
+140
°C
package
Storage temperature range, TSTG
–65 to +150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
+300
°C
Human body model (HBM)
2000
V
ESD ratings
Charged device model (CDM)
500
V
Machine model (MM)
100
V
(1)
Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2)
The THS6204 incorporates a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD
thermally-enhanced package. Under high-frequency ac operation (> 10kHz), the short-term output current capability is much greater
than the continuous dc output current rating. This short-term output current rating is about 8.5X the dc capability, or about ±850mA.
(3)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(4)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
2
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Copyright © 2007–2009, Texas Instruments Incorporated
Product Folder Link(s): THS6204


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