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THS6204IRHFTG4 Datasheet(PDF) 2 Page - Texas Instruments |
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THS6204IRHFTG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 43 page ABSOLUTE MAXIMUM RATINGS (1) THS6204 SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 ................................................................................................................................................... www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION(1) PACKAGE PRODUCT(2) PACKAGE-LEAD DESIGNATOR PACKAGE MARKING TRANSPORT MEDIA, QUANTITY THS6204IRHFT Tape and Reel, 250 QFN-24 RHF 6204 THS6204IRHFR Tape and Reel, 3000 THS6204IPWP Rails, 60 TSSOP-24 PWP THS6204 THS6204IPWPR Tape and Reel, 2000 (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. (2) The PowerPAD is electrically isolated from all other pins. Over operating free-air temperature range, unless otherwise noted. THS6204 UNIT Supply voltage, VS– to VS+ 28 V Input voltage, VI ±VS Differential input voltage, VID ±2 V Output current, IO—static dc (2) ±100 mA Continuous power dissipation See Dissipation Ratings table Maximum junction temperature, any condition, TJ (3) +150 °C Maximum junction temperature, continuous operation, long-term reliability, TJ (4), QFN +130 °C package Maximum junction temperature, continuous operation, long-term reliability, TJ (4), TSSOP +140 °C package Storage temperature range, TSTG –65 to +150 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds +300 °C Human body model (HBM) 2000 V ESD ratings Charged device model (CDM) 500 V Machine model (MM) 100 V (1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability. (2) The THS6204 incorporates a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD thermally-enhanced package. Under high-frequency ac operation (> 10kHz), the short-term output current capability is much greater than the continuous dc output current rating. This short-term output current rating is about 8.5X the dc capability, or about ±850mA. (3) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process. (4) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. 2 Submit Documentation Feedback Copyright © 2007–2009, Texas Instruments Incorporated Product Folder Link(s): THS6204 |
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