TPS2456A

SLVSBI8 – JULY 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DEVICE

TEMPERATURE

PACKAGE

MARKING

TPS2456ARHH

–40°C to 85°C

QFN36 (6mm × 6mm)

2456A

(1)

For package and ordering information see the Package Option Addendum at the end of this document or see the TI Web site at

www.ti.com.

THERMAL INFORMATION

TPS2456A

RHH

UNITS

36 PINS

32

23

11

°C/W

0.5

10

2.1

SPACER

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2)

The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as

specified in JESD51-7, in an environment described in JESD51-2a.

(3)

The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-

standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(4)

The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB

temperature, as described in JESD51-8.

(5)

The junction-to-top characterization parameter,

from the simulation data for obtaining

(6)

The junction-to-board characterization parameter,

from the simulation data for obtaining

Spacer

(7)

The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific

JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

ABSOLUTE MAXIMUM RATINGS

(1)

Over recommended junction temperature range and all voltages referenced to GND, unless otherwise noted.

VALUE

PINS OR PIN GROUPS

UNITS

MIN

MAX

GAT1x, GAT2x

–0.3

30

V

INx, OUTx, SENPx, SENMx, SETx, ENx, FLTx, PGx, ORENx

–0.3

20

V

CTx, MONx

–0.3

5

V

FLTx, PGx current sinking

5

mA

MONx current sourcing

5

mA

VINT current

–1

1

mA

Human Body Model

2

kV

ESD

Charged Device Model

0.5

kV

Junction Temperature

Internally Limited

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only. Functional operation of the device under any conditions beyond those indicated under recommended operating conditions is not

implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability.

2

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