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TPS2530 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS2530 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 17 page  TPS2530 www.ti.com SLUSB67 – AUGUST 2012 ELECTRICAL CHARACTERISTICS: TJ = TA = 25°C (1) Unless otherwise noted: VIN = 5 V, VEN = VIN, IOUT = 0 A PARAMETER TEST CONDITIONS(2) MIN TYP MAX UNIT POWER SWITCH 25°C 103 120 VIN = 3.3 V –40°C ≤ (TJ, TA) ≤ 85°C 103 150 RDS(on) Input – Output resistence m Ω 25°C 97 116 VIN = 5 V –40°C ≤ (TJ, TA) ≤ 85°C 97 143 CURRENT LIMIT IOS (3) Current-limit, See Figure 7 VIN = 3.3 V or 5 V 0.75 1 1.25 A SUPPLY CURRENT VIN = 3.3 V or 5 V, 25°C 0.01 1 ISD Supply current, switch disabled µA –40°C ≤ (TJ, TA ) ≤ 85°C, VIN = 5.5 V 2 VIN = 3.3 V, 25°C 55 75 ISE Supply current, switch enabled VIN = 5 V, 25°C 76 96 µA –40°C ≤ (TJ, TA ) ≤ 85°C, VIN = 5.5 V 118 IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, measure IVOUT 0.2 1 µA (1) Parametrics over a wider operational range are shown in the second ELECTRICAL CHARACTERISTICS table. (2) Pulsed testing techniques maintain junction temperature close to ambient temperature. (3) See CURRENT LIMIT section for explanation of this parameter. ELECTRICAL CHARACTERISTICS: –40°C ≤ T J ≤ 125°C Unless otherwise noted: 2.7 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C. PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT POWER SWITCH RDS(on) Input – Output resistance 97 200 m Ω ENABLE INPUT (EN) VIH High-level input Voltage 2 V VIL Low-level input Voltage 0.7 Hysteresis (2) 0.09 Leakage current VEN = 0 V or 5.5 V –1 0 1 µA VIN = 3.3 V, CL = 1 µF, RL = 100 Ω, EN ↑. See Figure 2, Figure 4 and Figure 5 tON Turn on time ms 0.5 A 1 1.75 2.5 VIN = 3.3 V, CL = 1 µF, RL = 100 Ω, EN ↑. See Figure 2, Figure 4 and Figure 5 tOFF Turn off time ms 0.5 A 0.8 1.35 1.9 VIN = 3.3 V, CL = 1 µF, RL = 100 Ω, See Figure 3 tR Rise time, output ms 0.5 A 0.25 0.45 0.65 VIN = 3.3 V, CL = 1 µF, RL = 100 Ω, See Figure 3 tF Fall time, output ms 0.5 A 0.2 0.3 0.4 CURRENT LIMIT IOS (3) Current-limit, See Figure 7 0.7 1 1.3 A VIN = 5 V (see Figure 6), One-half full load → tIOS Short-circuit response time(2) RSHORT = 50 mΩ, Measure from application to when 2 µs current falls below 120% of final value (1) Pulsed testing techniques maintain junction temperature close to ambient temperature. (2) These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purpose of TI’s product warranty. (3) See CURRENT LIMIT section for explanation of this parameter. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links :TPS2530 |
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