TPS62231-Q1

TPS622314-Q1

SLVSB63

– DECEMBER 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PACKAGE

PACKAGE

OUTPUT

FREQUENCY

PART NUMBER

ORDERING

VOLTAGE

[MHz]

DESIGNATOR

MARKING

TPS62231-Q1

1.8 V

3

DRY

TPS62231TDRYRQ1

31

–40°C to 105°C

TPS622314-Q1

1.5 V

3

DRY

TPS622314TDRYRQ1

14

(1)

For detailed ordering information see the PACKAGE OPTION ADDENDUM at the end of this data sheet.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

(1)

VALUE

UNIT

MIN

MAX

–0.3

7

V

–0.3

V

–0.3

3.6

V

Peak output current

internally limited

A

Human Body Model (HBM)

2

kV

Charged Device Model CDM)

1

Machine Model (MM)

200

V

Power dissipation

Internally limited

Maximum operating junction temperature

–40

125

°C

Storage temperature range

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute

–maximum–rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal.

(3)

The human body model is a 100-pF capacitor discharged through a 1.5-k

Ω resistor into each pin. The machine model is a 200-pF

capacitor discharged directly into each pin.

DISSIPATION RATINGS

(1)

POWER RATING

DERATING FACTOR

PACKAGE

1

× 1.5 SON

234

420 mW

4.2 mW/

°C

(1)

(2)

This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).

2

Copyright

© 2011, Texas Instruments Incorporated