SiHG25N40D

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Vishay Siliconix

S12-0625-Rev. B, 26-Mar-12

2

Document Number: 91484

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-40

°C/W

Maximum Junction-to-Case (Drain)

-0.45

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

400

-

-

V

V

-0.5

-

V/°C

Gate-Source Threshold Voltage (N)

3

-

5

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

1

μA

-

-

10

Drain-Source On-State Resistance

-

0.14

0.17



Forward Transconductance

-

7.4

-

S

Dynamic

Input Capacitance

f = 1 MHz

-

1707

-

pF

Output Capacitance

-

177

-

Reverse Transfer Capacitance

-19

-

Total Gate Charge

-44

88

nC

Gate-Source Charge

-12

-

Gate-Drain Charge

-23

-

Turn-On Delay Time

-21

42

ns

Rise Time

-57

86

Turn-Off Delay Time

-40

80

Fall Time

-37

74

Gate Input Resistance

f = 1 MHz, open drain

-

1.8

-



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

24

A

Pulsed Diode Forward Current

--

78

Diode Forward Voltage

-

-

1.2

V

Reverse Recovery Time

-

353

-

ns

Reverse Recovery Charge

-4.4

-

μC

Reverse Recovery Current

-24

-

A

S

D

G