SiHU5N50D-GE3 datasheet(4/8 Pages) VISHAY

Part #	SiHU5N50D-GE3

Description	D Series Power MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiHU5N50D

www.vishay.com

Vishay Siliconix

S12-0690-Rev. A, 02-Apr-12

4

Document Number: 91492

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

VSD, Source-Drain Voltage (V)

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

T

J = 150 °C

T

J = 25 °C

V

GS = 0 V

V

DS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1

10

100

1000

* V

GS > minimum VGS at which RDS(on) is specified

Operation in this area

limited by RDS(on)

BVDSS Limited

TC = 25 °C

TJ = 150 °C

Single Pulse

Limited by R

DS(on)*

100 μs

1 ms

10 ms

TJ, Case Temperature (°C)

25

50

75

100

125

150

1

2

3

4

5

6

0

TJ, Junction Temperature (°C)

- 60

0

160

- 40 - 20

20

40

60

80 100 120 140

475

500

525

550

575

600

625

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

Pulse Time (s)

Duty Cycle = 0.5

0.1

0.05

Single Pulse

0.2

0.02

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