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MAGX-000912-250L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-000912-250L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 6 page GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty MAGX-000912-250L00 Production V1 18 Aug 11 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Features GaN depletion mode HEMT microwave transistor Internally matched Common source configuration Broadband Class AB operation RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Applications Avionics: Mode-S, TCAS, JTIDS, DME and TACAN. Product Description The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode- S, TCAS, JTIDS, DME and TACAN . Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information MAGX-000912-250L00 250W GaN Power Transistor MAGX-000912-SB1PPR Evaluation Fixture Typical RF Performance at Pout = 250W Peak Freq Pin Gain Slope Id Eff Avg-Eff RL Droop (MHz) (W) (dB) (dB) (A) (%) (%) (dB) (dB) 960 3.4 18.7 - 8.5 58.8 - -8.8 0.4 1030 4.2 17.8 - 8.3 60.1 - -12.7 0.4 1090 3.4 18.7 - 8.2 61.1 - -9.3 0.4 1150 3.4 18.7 - 8.2 60.7 - -8.6 0.3 1215 3.5 18.6 1.0 8.6 58.0 59.7 -11.5 0.4 |
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