GaN on SiC HEMT Pulsed Power Transistor

250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty

MAGX-000912-250L00

Production V1

18 Aug 11

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

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M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Features

 GaN depletion mode HEMT microwave transistor

 Internally matched

 Common source configuration

 Broadband Class AB operation

 RoHS Compliant

 +50V Typical Operation



Applications



Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.

Product Description

The MAGX-000912-250L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide RF power transistor

optimized for civilian and military pulsed avionics amplifier

applications the 960 MHz to 1215 MHz range such as Mode-

S, TCAS, JTIDS, DME and TACAN . Using state of the art

wafer fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

ruggedness over a wide bandwidth for today’s demanding

application needs. High breakdown voltages allow for reliable

and stable operation in extreme mismatched load conditions

unparalleled with older semiconductor technologies.

Ordering Information

MAGX-000912-250L00 250W GaN Power Transistor

MAGX-000912-SB1PPR Evaluation Fixture

Typical RF Performance at Pout = 250W Peak

Freq

Pin

Gain

Slope

Id

Eff

Avg-Eff

RL

Droop

(MHz)

(W)

(dB)

(dB)

(A)

(%)

(%)

(dB)

(dB)

960

3.4

18.7

-

8.5

58.8

-

-8.8

0.4

1030

4.2

17.8

-

8.3

60.1

-

-12.7

0.4

1090

3.4

18.7

-

8.2

61.1

-

-9.3

0.4

1150

3.4

18.7

-

8.2

60.7

-

-8.6

0.3

1215

3.5

18.6

1.0

8.6

58.0

59.7

-11.5

0.4