MAGX-000912-SB1PPR datasheet(6/6 Pages) MA-COM

Part #	MAGX-000912-SB1PPR

Description	GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128關s Pulse, 10% Duty

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

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GaN on SiC HEMT Pulsed Power Transistor

250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty

MAGX-000912-250L00

Production V1

18 Aug 11

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

6

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Outline Drawing

TURNING THE DEVICE ON

1. Set VGS to the pinch-off (VP), typically -5V

2. Turn on VDS to nominal voltage (50V)

3. Increase VGS until the IDS current is reached

4. Apply RF power to desired level

TURNING THE DEVICE OFF

1. Turn the RF power off

2. Decrease VGS down to VP

3. Decrease VDS down to 0V

4. Turn off VGS

CORRECT DEVICE SEQUENCING

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