GaN on SiC HEMT Pulsed Power Transistor

125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty

MAGX-001214-125L00

Production V1

18 Aug 11

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Absolute Maximum Ratings Table (1, 2, 3)

+65V

-8 to -2V

4.8 Apk

+37 dBm

Absolute Max. Junction/Channel Temp

200ºC

114 years

Pulsed Power Dissipation at 85ºC

115 Wpk

Thermal Resistance, (Tj = 70ºC)

300us Pulse / 10% Duty

1.0ºC/W

Operating Temp

-40 to +95ºC

Storage Temp

-65 to +150ºC

Mounting Temperature

See solder reflow profile

ESD Min. - Machine Model (MM)

50V

ESD Min. - Human Body Model (HBM)

>250V

MSL Level

MSL1

(1) Operation of this device above any one of these parameters may cause permanent damage.

(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as

possible to maximize lifetime.

(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175

Parameter

Test Conditions

Symbol

Min

Typ

Max

Units

DC CHARACTERISTICS

Drain-Source Leakage Current

-

0.2

6

mA

Gate Threshold Voltage

-5

-3.8

-2

V

Forward Transconductance

2.5

3.6

-

S

DYNAMIC CHARACTERISTICS

Input Capacitance

Not applicable—Input internally matched

N/A

N/A

N/A

pF

Output Capacitance

-

11

-

pF

Feedback Capacitance

-

1.1

-

pF