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MAGX-001220-100L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-001220-100L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 6 page GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz MAGX-001220-100L00 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Production V1 19 Sept 11 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Applications General purpose for pulsed or CW applications Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation DTV Product Description The MAGX-001220-100L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX- 001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical CW RF Performance Freq. (MHz) Pin (W Peak) Pout (W Peak) Gain (dB) Id-Pk (A) Eff (%) 1200 4 120 14.8 4.0 60 1400 4 120 14.8 4.6 52 1600 4 130 15.1 4.9 53 1800 4 120 14.8 4.4 54 2000 4 120 14.8 4.5 53 Ordering Information MAGX-001220-100L00 100W GaN Power Transistor MAGX-001220-1SB1PPR Evaluation Board |
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