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MAGX-002731-SB2PPR Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-002731-SB2PPR Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 7 page GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle MAGX-002731-100L00 Production V1 23 Aug 11 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) +65V Supply Voltage (Vgg) -8 to 0V Supply Current (Id1) 7100 mA Pk Input Power (Pin) +34 dBm Absolute Max. Junction/Channel Temp 200 ºC Pulsed Power Dissipation (Pavg) at 85 ºC 128W Thermal Resistance, (Tchannel = 200 ºC) VDD = 50V, IDQ = 500mA, Pout = 100W Peak (300us Pulse / 10% Duty) 0.9 ºC/W Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50 V ESD Min. - Human Body Model (HBM) >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - - 6 mA Gate Threshold Voltage VDS = 5V, ID = 15.0mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5V, ID = 3.5mA GM 2.5 - - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable—Input internally matched CGS N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz CDS - 30.3 35.4 pF Feedback Capacitance VDS = 50V, VGS = -8V, F = 1MHz CGD - 2.8 5.4 pF |
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