TMS464409, TMS464409P, TMS465409, TMS465409P

16 777 216 BY 4-BIT EXTENDED DATA OUT

DYNAMIC RANDOM-ACCESS MEMORIES

SMKS895A – MAY 1997 – REVISED OCTOBER 1997

9

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted)

TMS464409 /P

PARAMETER

TEST CONDITIONS†

’464409-40

’464409P-40

’464409-50

’464409P-50

’464409-60

’464409P-60

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

VOH

High-level

IOH = – 2 mA

LVTTL

2.4

2.4

2.4

V

VOH

g

output voltage

IOH = – 100 µA

LVCMOS

VCC – 0.2

VCC – 0.2

VCC – 0.2

V

VOL

Low-level

IOL = 2 mA

LVTTL

0.4

0.4

0.4

V

VOL

output voltage

IOL = 100 µA

LVCMOS

0.2

0.2

0.2

V

II

Input current

(leakage)

VCC = 3.6 V,

VI = 0 V to 3.9 V,

All others = 0 V to VCC

± 10

± 10

± 10

µA

IO

Output current

(leakage)

VCC = 3.6 V,

VO = 0 V to VCC,

CAS high

± 10

± 10

± 10

µA

ICC1‡§

Average read-

or write-cycle

current

VCC = 3.6 V,

Minimum cycle

125

100

90

mA

Average

After one memory cycle,

RAS and CAS high,

VIH = 2 V (LVTTL)

1

1

1

mA

ICC2

Average

standby current

After one memory cycle,

RAS and CAS high,

’464409

500

500

500

µA

g,

VIH = VCC – 0.2 V

(LVCMOS)

’464409P

150

150

150

µA

ICC3§

Average

RAS-only

refresh current

VCC = 3.6 V,

Minimum cycle,

RAS cycling,

CAS high (RAS only)

125

100

90

mA

ICC4‡¶

Average EDO

current

VCC = 3.6 V,

tPC = minimum,

RAS low,

CAS cycling

140

110

90

mA

ICC5

Average CBR

refresh current

VCC = 3.6 V,

Minimum cycle,

RAS low after CAS low

160

130

110

mA

ICC6#

Average

self-refresh

current

CAS < 0.2 V,

RAS < 0.2 V,

Measured after tRASS minimum

300

300

300

µA

ICC10#

Average

battery-backup

operating

current,

CBR only

tRAS ≤ 300 ns, tRC = 31.25 ms

VCC – 0.2 V ≤ VIH ≤ 3.9 V,

0 V

≤ VIL ≤ 0.2 V,

W and OE = VIH,

Address and data stable

400

400

400

µA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RAS = VIL

¶ Measured with a maximum of one address change per EDO cycle, tHPC

# For TMS464409P only