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FM25V20-GTR Datasheet(PDF) 1 Page - Ramtron International Corporation

Part # FM25V20-GTR
Description  2Mb Serial 3V F-RAM Memory
Download  17 Pages
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Manufacturer  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM25V20-GTR Datasheet(HTML) 1 Page - Ramtron International Corporation

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
August 2012
Page 1 of 17
FM25V20
2Mb Serial 3V F-RAM Memory
Features
2M bit Ferroelectric Nonvolatile RAM
Organized as 256K x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID
Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
100 A Standby Current (typ.)
3 A Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS EIAJ SOIC Package
8-pin “Green”/RoHS TDFN Package
8-pin “Green”/POHS PDIP Package
Description
The FM25V20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling.
The
product
offers
very
high
write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding controls
where the long write time of Serial Flash can cause
data loss.
The FM25V20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The device uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The device incorporates a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The
device
is
guaranteed
over
an
industrial
temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
VDD
HOLD
C
D
1
2
3
4
8
7
6
5
Pin Name
Function
/S
Chip Select
/W
Write Protect
/HOLD
Hold
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
VDD
Supply Voltage
VSS
Ground
/S
Q
/W
VSS
VDD
/HOLD
C
D
1
2
3
4
8
7
6
5
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