TM2EJ64DPN, TM2FJ64DPN 2097152 BY 64BIT

TM2EJ64EPN, TM2FJ64EPN 2097152 BY 64BIT

EXTENDEDDATAOUT DYNAMIC RAM MODULES SODIMM

SMMS685 − AUGUST 1997

5

POST OFFICE BOX 1443

−0.5 V to 4.6 V

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Voltage range on any pin (see Note 1)

− 0.5 V to 4.6 V

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Short-circuit output current

50 mA

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Power dissipation: TM2xP64DPN

8 W

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TM2xP64EPN

8 W

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0

°C to 70°C

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− 55

°C to 125°C

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† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

recommended operating conditions

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3

3.3

3.6

V

VSS

Supply voltage

0

V

VIH

High-level input voltage

2

VDD + 0.3

V

VIH-SPD

High-level input voltage for the SPD device

2

5.5

V

VIL

Low-level input voltage

−0.3

0.8

V

TA

Ambient temperature

0

70

°C

capacitance

over recommended ranges of supply voltage and ambient temperature,

f = 1 MHz (see Note 2)

PARAMETER

’2xJ64xPN

UNIT

PARAMETER

MIN

MAX

UNIT

Ci(A)

Input capacitance, A0 − A10

42

pF

Ci(OE)

Input capacitance, OE0

58

pF

Ci(CAS)

Input capacitance, CASx

9

pF

Ci(RAS)

Input capacitance, RAS0

58

pF

Ci(W)

Input capacitance, WE0

58

pF

Co

Output capacitance

9

pF

Ci/o(SDA) Input/output capacitance, SDA input

9

pF

Ci(SPD)

Input capacitance, SA0, SA1, SA2, SCL inputs

7

pF

NOTE 2: VDD = NOM supply voltage ± 10%, and the bias on pins under test is 0 V.