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ALD1121EDA Datasheet(PDF) 1 Page - Advanced Linear Devices

Part # ALD1121EDA
Description  QUAD/DUAL EPAD짰 PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

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Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD1121E/ALD1123E
BLOCK DIAGRAM
Operating Temperature Range*
0
°C to +70°C0°C to +70°C
-55
°C to +125°C
8-Pin SOIC
8-Pin Plastic Dip
8-Pin CERDIP
Package
Package
Package
ALD1121ESAL
ALD1121EPAL
ALD1121EDA
16-Pin SOIC
16-Pin Plastic Dip
16-Pin CERDIP
Package
Package
Package
ALD1123ESCL
ALD1123EPCL
ALD1123EDC
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
ALD1121E/ALD1123E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1121E/ALD1123E are
precision matched and adjusted (e-trimmed) at the factory resulting in
quad/dual MOSFETs that are highly matched in electrical characteristics.
The ALD1123E has four (4) separate source pins. SN1, SN2 share a
common substrate pin, V-1, which has to be connected to the most
negative voltage potential. Likewise, SN3, SN4 share a common substrate
pin, V-2, which has to be connected to the negative voltage potential for
SN3, SN4. The ALD1121E has two (2) separate source pins (SN1, SN2).
Both SN1, SN2 share a common substrate, pin 4, which has to be
connected to the most negative voltage potential. For a given input voltage,
the threshold voltage of a MOSFET device determines its drain on-current,
resulting in an on-resistance characteristic that can be precisely preset and
then controlled by the input voltage very accurately.
Using an ALD1121E/ALD1123E is simple and straight forward.
The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. For
a given input voltage, the threshold voltage of a MOSFET device determines
its drain on-current, resulting in an on-resistance characteristic that can be
precisely preset and then controlled by the input voltage very accurately.
Since these devices are on the same monolithic chip, they also exhibit
excellent tempco matching characteristics.
eEPAD
TM
®
N
A
B
L
E
D
E
ADVANCED
LINEAR
DEVICES, INC.
BENEFITS
Precision matched electrically after
packaging
Simple, elegant single-chip user option
to trim voltage/current values
Excellent device matching characteristics
with or without additional electrical trim
Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
TOP VIEW
SCL, PCL, DC PACKAGES
TOP VIEW
SAL, PAL, DA PACKAGES
M 1
M 2
M 3
M 4
PN4 (5)
PN1 (1)
DN1 (3)
GN1(2)
DN2 (15)
PN2 (13)
GN2 (14)
PN3 (9)
DN3 (11)
GN3(10)
DN4 (7)
GN4 (6)
SN1 (4)
SN2 (16)
SN3 (12)
SN4 (8)
V-2 (8)
V-1 (4)
ALD1123E
PN1 (1)
DN1 (3)
GN1(2)
DN2 (7)
PN2 (5)
GN2 (6)
SN2 (8)
M 1
M 2
SN1(4)
V- (4)
ALD1121E
1
2
3
6
7
8
4
5
GN1
DN1
SN2
DN2
ALD1121E
SN1,V-
GN2
PN2
PN1
M 1
M 2
SN2
1
2
3
14
15
16
4
13
5
12
PN3
6
7
8
10
11
GN1
DN1
PN1
GN4
V-2, SN4
DN4
9
GN3
DN3
GN2
DN2
PN2
SN3
V-1, SN1
PN4
ALD1123E
M 1
M 2
M 4
M 3


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