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ALD1121EDA Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD1121EDA Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 14 page Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ALD1121E/ALD1123E BLOCK DIAGRAM Operating Temperature Range* 0 °C to +70°C0°C to +70°C -55 °C to +125°C 8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP Package Package Package ALD1121ESAL ALD1121EPAL ALD1121EDA 16-Pin SOIC 16-Pin Plastic Dip 16-Pin CERDIP Package Package Package ALD1123ESCL ALD1123EPCL ALD1123EDC ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION ALD1121E/ALD1123E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1121E/ALD1123E are precision matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1, SN2 share a common substrate pin, V-1, which has to be connected to the most negative voltage potential. Likewise, SN3, SN4 share a common substrate pin, V-2, which has to be connected to the negative voltage potential for SN3, SN4. The ALD1121E has two (2) separate source pins (SN1, SN2). Both SN1, SN2 share a common substrate, pin 4, which has to be connected to the most negative voltage potential. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on-resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Using an ALD1121E/ALD1123E is simple and straight forward. The MOSFETs function as n-channel MOSFETs, except that all the devices have exceptional matching to each other in electrical characteristics. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on-resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. eEPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. BENEFITS • Precision matched electrically after packaging • Simple, elegant single-chip user option to trim voltage/current values • Excellent device matching characteristics with or without additional electrical trim • Remotely and electrically trim parameters on circuits that are physically inaccessible PIN CONFIGURATION TOP VIEW SCL, PCL, DC PACKAGES TOP VIEW SAL, PAL, DA PACKAGES M 1 M 2 M 3 M 4 PN4 (5) PN1 (1) DN1 (3) GN1(2) DN2 (15) PN2 (13) GN2 (14) PN3 (9) DN3 (11) GN3(10) DN4 (7) GN4 (6) SN1 (4) SN2 (16) SN3 (12) SN4 (8) V-2 (8) V-1 (4) ALD1123E PN1 (1) DN1 (3) GN1(2) DN2 (7) PN2 (5) GN2 (6) SN2 (8) M 1 M 2 SN1(4) V- (4) ALD1121E 1 2 3 6 7 8 4 5 GN1 DN1 SN2 DN2 ALD1121E SN1,V- GN2 PN2 PN1 M 1 M 2 SN2 1 2 3 14 15 16 4 13 5 12 PN3 6 7 8 10 11 GN1 DN1 PN1 GN4 V-2, SN4 DN4 9 GN3 DN3 GN2 DN2 PN2 SN3 V-1, SN1 PN4 ALD1123E M 1 M 2 M 4 M 3 |
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