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TPIC5404 Datasheet(PDF) 4 Page - Texas Instruments |
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TPIC5404 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 15 page TPIC5404 HBRIDGE POWER DMOS ARRAY SLIS023B − MARCH 1994 − REVISED SEPTEMBER 1995 2−4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 32 65 td(off) Turn-off delay time VDD = 25 V, RL = 25 Ω, tr1 = 10 ns, 40 80 ns tr2 Rise time VDD = 25 V, tf1 = 10 ns, RL = 25 Ω, See Figure 2 tr1 = 10 ns, 15 30 ns tf2 Fall time tf1 = 10 ns, See Figure 2 25 50 Qg Total gate charge VDS = 48 V, ID = 1 A, VGS = 10 V, 6.6 8 Qgs(th) Threshold gate-to-source charge VDS = 48 V, See Figure 3 ID = 1 A, VGS = 10 V, 0.8 1 nC Qgd Gate-to-drain charge See Figure 3 2.6 3.2 nC LD Internal drain inductance 5 nH LS Internal source inductance 5 nH Rg Internal gate resistance 0.25 Ω thermal resistance PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance DW package 90 °C/W RθJA Junction-to-ambient thermal resistance NE package All outputs with equal power, See Note 4 60 °C/W RθJP Junction-to-pin thermal resistance DW package All outputs with equal power, See Note 4 30 °C/W RθJP Junction-to-pin thermal resistance NE package 25 °C/W NOTE 4: Package mounted on an FR4 printed-circuit board with no heat sink PARAMETER MEASUREMENT INFORMATION IRM† Reverse di/dt = 100 A/ µs trr(SD) † IRM = maximum recovery current 25% of IRM† TJ = 25°C Time − ns 2 1 0 − 1 − 2 − 3 − 4 0 200 400 600 800 1000 1200 Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode |
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