TPIC5421L

HBRIDGE GATEPROTECTED LOGICLEVEL

POWER DMOS ARRAY

SLIS027A − OCTOBER 1994 − REVISED OCTOBER 1995

3

POST OFFICE BOX 655303

POST OFFICE BOX 1443

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

60

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 5

VDS = VGS,

1.5

1.85

2.2

V

V(BR)GS

Gate-to-source breakdown voltage

IGS = 250 µA

18

V

V(BR)SG

Source-to-gate breakdown voltage

ISG = 250 µA

9

V

V(BR)

Reverse drain-to-GND breakdown voltage (across

D1, D2)

Drain-to-GND current = 250

µA

100

V

VDS(on)

Drain-to-source on-state voltage

ID = 1 A,

See Notes 2 and 3

VGS = 5 V,

0.4

0.475

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 1 A,

VGS = 0 (Z1, Z2, Z3, Z4),

See Notes 2 and 3 and Figure 12

0.9

1.1

V

VF

Forward on-state voltage, GND-to-drain

ID = 1 A (D1, D2),

See Notes 2 and 3

4.6

V

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

TC = 25°C

0.05

1

A

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward-gate current, drain short circuited to source

VGS = 15 V,

VDS = 0

20

200

nA

IGSSR

Reverse-gate current, drain short circuited to source

VSG = 5 V,

VDS = 0

10

100

nA

Ilkg

Leakage current, drain-to-GND

VDGND = 48 V

TC = 25°C

0.05

1

A

Ilkg

Leakage current, drain-to-GND

VDGND = 48 V

TC = 125°C

0.5

10

µA

rDS(on)

Static drain-to-source on-state resistance

VGS = 5 V,

ID = 1 A,

TC = 25°C

0.4

0.475

Ω

rDS(on)

Static drain-to-source on-state resistance

ID = 1 A,

See Notes 2 and 3

and Figures 6 and 7

TC = 125°C

0.65

0.68

Ω

gfs

Forward transconductance

VDS = 15 V,

ID = 0.5 A,

See Notes 2 and 3 and Figure 9

1.25

1.4

S

Ciss

Short-circuit input capacitance, common source

220

275

Coss

Short-circuit output capacitance, common source

VDS = 25 V,

f = 1 MHz,

VGS = 0,

See Figure 11

120

150

pF

Crss

Short-circuit reverse-transfer capacitance,

common source

VDS = 25 V,

f = 1 MHz,

VGS = 0,

See Figure 11

100

125

pF

NOTES:

2. Technique should limit TJ − TC to 10°C maximum.

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Z1 and Z3

55

trr

Reverse-recovery time

I

= 0.5 A,

V

= 48 V,

Z2 and Z4

150

ns

trr

Reverse-recovery time

IS = 0.5 A,

VGS = 0,

VDS = 48 V,

di/dt = 100 A/

µs,

D1 and D2

200

ns

S

VGS = 0,

See Figures 1 and 14

DS

di/dt = 100 A/

µs,

Z1 and Z3

0.06

QRR

Total diode charge

See Figures 1 and 14

Z2 and Z4

0.3

µC

QRR

Total diode charge

D1 and D2

0.7

µC