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ALD110900PAL Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD110900PAL Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 11 page Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com e EPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD® Matched Pair MOSFET Family. Intended for low voltage small signal applications, the ALD110800/ ALD110900 features Zero-Threshold ™voltage, which reduces or elimi- nates input to output voltage level shift, including circuits where the signal is referenced to GND or V+. This feature greatly reduces output signal voltage level shift and enhances signal operating range, especially for very low operating voltage environments. With these zero threshold de- vices, an analog circuit with multiple stages can be constructed to oper- ate at extremely low supply or bias voltage levels. For example, an input amplifier stage operating at 0.2V supply voltage has been demonstrated. ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair MOSFETs are designed for exceptional device electrical characteristics matching with the threshold voltage set precisely at +0.00V +0.01V, fea- turing a typical offset voltage of only +0.001V (1mV). As these devices are on the same monolithic chip, they also exhibit excellent tempco track- ing characteristics. They are versatile as design components for a broad range of analog applications such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multi- plexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits. Even units from different batches and different date of manufacture have correspondingly well matched characteristics. These devices are built for minimum offset voltage and differential ther- mal response, and they are designed for switching and amplifying appli- cations in +0.2V to +10V systems where low input bias current, low input capacitance, and fast switching speed are desired. The VGS(th) of these devices is set at +0.00V, which classifies them as both enhancement mode and depletion mode devices. When the gate is set at 0.00V, the drain current is +1µA @ VDS = 0.1V, which allows a class of circuits with output voltage level biased at or near input voltage level without voltage level shift. These devices exhibit well controlled turn-off and sub-threshold characteristics of standard enhancement mode MOSFETs. The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET devices that feature high input impedance (1012Ω) and high DC current gain (>10 8). A sample calculation of the DC current gain at a drain current of 3mA and input leakage current of 30pA at 25°C is 3mA/30pA = 100,000,000. For most applications, connect the V+ pin to the most posi- tive voltage and the V- and IC pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times. QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY FEATURES • Precision zero threshold voltage mode • Nominal RDS(ON) @VGS=0.00V of 104KΩ • Matched MOSFET to MOSFET characteristics • Tight lot to lot parametric control • VGS(th) match (VOS) to 2mV and 10mV max. • Positive, zero, and negative VGS(th) tempco • Low input capacitance • Low input/output leakage currents APPLICATIONS • Energy harvesting circuits • Very low voltage analog and digital circuits • Zero power fail safe circuits • Backup battery circuits & power failure detector • Low level voltage clamp & zero crossing detector • Source followers and buffers • Precision current mirrors and current sources • Capacitives probes and sensor interfaces • Charge detectors and charge integrators • Differential amplifier input stage • High side switches • Peak detectors and level shifters • Sample and Hold • Current multipliers • Analog switches / multiplexers • Voltage comparators and level shifters ALD110800/ALD110800A/ALD110900/ALD110900A ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) * Contact factory for industrial temp. range or user-specified threshold voltage values. Operating Temperature Range* 0°C to +70°C0°C to +70°C 16-Pin 16-Pin 8-Pin 8-Pin SOIC Plastic Dip SOIC Plastic Dip Package Package Package Package ALD110800ASCL ALD110800APCL ALD110900ASAL ALD110900APAL ALD110800SCL ALD110800PCL ALD110900SAL ALD110900PAL *IC pins are internally connected, connect to V- SCL, PCL PACKAGES PIN CONFIGURATIONS SAL, PAL PACKAGES VGS(th)= +0.00V IC* 1 2 3 14 15 16 4 13 5 12 IC* 6 7 8 10 11 GN1 DN1 IC* DN4 IC* GN4 9 GN3 DN3 DN2 GN2 V+ S34 S12 V- V+ V- M 4 M 3 M 1 M 2 V- V- V- V- V- GN1 DN1 S12 DN2 GN2 1 2 3 6 7 8 4 5 M 1 M 2 V- V- V- IC* IC* ALD110800 ALD110900 |
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