Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

www.aldinc.com

GENERAL DESCRIPTION

ALD110802/ALD110902 are high precision monolithic quad/dual enhance-

ment mode N-Channel MOSFETS matched at the factory using ALD’s

proven EPAD® CMOS technology. These devices are intended for low volt-

age, small signal applications. The ALD110802/ALD110902 MOSFETS are

designed and built for exceptional device electrical characteristics match-

ing. Since these devices are on the same monolithic chip, they also exhibit

excellent tempco tracking characteristics. They are versatile circuit elements

useful as design components for a broad range of analog applications,

such as basic building blocks for current sources, differential amplifier input

stages, transmission gates, and multiplexer applications. For most applica-

tions, connect the V- and IC pins to the most negative voltage in the sys-

tem and the V+ pin to the most positive voltage. All other pins must have

voltages within these voltage limits at all times.

The ALD110802/ALD110902 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold character-

istics and can be biased and operated in the sub-threshold region. Since

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

The ALD110802/ALD110902 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the device

at a drain current of 3mA and input leakage current of 30pA at 25°C is =

3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.20V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• High input impedance — 10

• DC current gain >10

8

• Low input and output leakage currents

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin

16-Pin

8-Pin

8-Pin

SOIC

Plastic Dip

SOIC

Plastic Dip

Package

Package

Package

Package

ALD110802SCL ALD110802PCL

ALD110902SAL ALD110902PAL

*IC pins are internally connected.

Connect to V-

SCL, PCL PACKAGES

SAL, PAL PACKAGES

PIN CONFIGURATION

APPLICATIONS

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage(<0.20V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

• Sample and Hold circuits

• Analog and digital inverters

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

• Discrete Analog switches / multiplexers

e

EPAD

TM

®

N A

B L

E D

E

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

PRECISION MATCHED PAIR MOSFET ARRAY

ALD110802/ALD110902

VGS(th)= +0.20V

* Contact factory for industrial temp. range or user-specified threshold voltage values.

ALD110802

ALD110902

IC*

1

2

3

14

15

16

4

13

5

12

IC*

6

7

8

10

11

IC*

IC*

9

M 4

M 3

M 1

M 2

V-

1

2

3

6

7

8

4

5

M 1

M 2

V-

V-

V-

IC*

IC*