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ALD114835PCL Datasheet(PDF) 1 Page - Advanced Linear Devices

Part # ALD114835PCL
Description  QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

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Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
SCL, PCL PACKAGES
PIN CONFIGURATIONS
*IC pins are internally connected,
connect to V-
Operating Temperature Range*
0°C to +70°C0°C to +70°C
16-Pin
16-Pin
8-Pin
8-Pin
SOIC
Plastic Dip
SOIC
Plastic Dip
Package
Package
Package
Package
ALD114835SCL ALD114835PCL ALD114935SAL
ALD114935PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values
e
EPAD
TM
®
N A
B L
E D
E
ADVANCED
LINEAR
DEVICES, INC.
ALD114835/ALD114935
GENERAL DESCRIPTION
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay ap-
plications, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETs have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current
source mode for higher voltage levels and providing a constant drain current.
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-
trical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electri-
cal characteristics, each individual MOSFET also exhibits well controlled pa-
rameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differ-
ential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect the V+ pin to the most positive voltage and the
V- and IC pins to the most negative voltage in the system. All other pins must
have voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V
• Nominal RDS(ON) @VGS=0.0V of 540Ω
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 10
12Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >10
8
• Low input and output leakage currents
APPLICATIONS
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters
VGS(th)= -3.50V
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
SAL, PAL PACKAGES
ALD114835
ALD114935
IC*
1
2
3
14
15
16
4
13
5
12
IC*
6
7
8
10
11
GN1
DN1
IC*
DN4
IC*
GN4
9
GN3
DN3
DN2
GN2
V+
S34
S12
V-
V+
V-
M 4
M 3
M 1
M 2
V-
V-
V-
V-
V-
GN1
DN1
S12
DN2
GN2
1
2
3
6
7
8
4
5
M 1
M 2
V-
V-
V-
IC*
IC*
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))


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