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ALD114835PCL Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD114835PCL Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 11 page Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com SCL, PCL PACKAGES PIN CONFIGURATIONS *IC pins are internally connected, connect to V- Operating Temperature Range* 0°C to +70°C0°C to +70°C 16-Pin 16-Pin 8-Pin 8-Pin SOIC Plastic Dip SOIC Plastic Dip Package Package Package Package ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL * Contact factory for industrial temp. range or user-specified threshold voltage values e EPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. ALD114835/ALD114935 GENERAL DESCRIPTION ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applica- tions. They are excellent functional replacements for normally-closed relay ap- plications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETs have the unique characteristics of, when the gate is grounded, oper- ating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current. ALD114835/ALD114935 MOSFETs are designed for exceptional device elec- trical characteristics matching. As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile as design components for a broad range of analog applications such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. Besides matched pair electri- cal characteristics, each individual MOSFET also exhibits well controlled pa- rameters, enabling the user to depend on tight design limits. Even units from different batches and different date of manufacture have correspondingly well matched characteristics. These depletion mode devices are built for minimum offset voltage and differ- ential thermal response, and they are designed for switching and amplifying applications in single 5V to +/-5V systems where low input bias current, low input capacitance and fast switching speed are desired. These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. The ALD114835/ALD114935 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is recommended that the user, for most applications, connect the V+ pin to the most positive voltage and the V- and IC pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times. FEATURES • Depletion mode (normally ON) • Precision Gate Threshold Voltages: -3.50V +/- 0.05V • Nominal RDS(ON) @VGS=0.0V of 540Ω • Matched MOSFET to MOSFET characteristics • Tight lot to lot parametric control • Low input capacitance • VGS(th) match (VOS) — 20mV • High input impedance — 10 12Ω typical • Positive, zero, and negative VGS(th) temperature coefficient • DC current gain >10 8 • Low input and output leakage currents APPLICATIONS • Functional replacement of Form B (NC) relay • Zero power fail safe circuits • Backup battery circuits • Power failure detector • Fail safe signal detector • Source followers and buffers • Precision current mirrors • Precision current sources • Capacitives probes • Sensor interfaces • Charge detectors • Charge integrators • Differential amplifier input stage • High side switches • Peak detectors • Sample and Hold • Alarm systems • Current multipliers • Analog switches • Analog multiplexers • Voltage comparators • Level shifters VGS(th)= -3.50V QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY SAL, PAL PACKAGES ALD114835 ALD114935 IC* 1 2 3 14 15 16 4 13 5 12 IC* 6 7 8 10 11 GN1 DN1 IC* DN4 IC* GN4 9 GN3 DN3 DN2 GN2 V+ S34 S12 V- V+ V- M 4 M 3 M 1 M 2 V- V- V- V- V- GN1 DN1 S12 DN2 GN2 1 2 3 6 7 8 4 5 M 1 M 2 V- V- V- IC* IC* ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) |
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