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TM248GBK32F-60 Datasheet(PDF) 5 Page - Texas Instruments |
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TM248GBK32F-60 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 9 page TM124FBK32F, TM124FBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE SMMS660 – MARCH 1996 5 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS † ’248GBK32F - 60 ’248GBK32F - 70 ’248GBK32F - 80 UNIT PARAMETER TEST CONDITIONS † MIN MAX MIN MAX MIN MAX UNIT VOH High-level output voltage IOH = – 5 mA 2.4 2.4 2.4 V VOL Low-level output voltage IOL = 4.2 mA 0.4 0.4 0.4 V II Input current (leakage) VCC = 5.5 V, VI = 0 V to 6.5 V, All other pins = 0 V to VCC ± 10 ± 10 ± 10 µA IO Output current (leakage) VCC = 5.5 V, VO = 0 V to VCC, CAS high ± 20 ± 20 ± 20 µA ICC1 Read- or write-cycle current (see Note 3) VCC = 5.5 V, Minimum cycle 384 364 344 mA ICC2 Standby current VIH = 2.4 V (TTL), After one memory cycle, RAS and CAS high 8 8 8 mA ICC2 Standby current VIH = VCC – 0.2 V (CMOS), After one memory cycle, RAS and CAS high 4 4 4 mA ICC3 Average refresh current (RAS only or CBR) (see Notes 3 and 5) VCC = 5.5 V, Minimum cycle, RAS cycling, CAS high (RAS only); RAS low after CAS low (CBR) 760 720 680 mA ICC4 Average EDO current (see Note 4) VCC = 5.5 V, tPC = MIN, RAS low, CAS cycling 204 184 164 mA † For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions. NOTES: 3. Measured with a maximum of one address change while RAS = VIL 4. Measured with a maximum of one address change while CAS = VIH 5. Measured with both sides in CBR cycle capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz (see Note 6) PARAMETER ’124FBK32F ’248GBK32F UNIT PARAMETER MIN MAX MIN MAX UNIT Ci(A) Input capacitance, A0 – A9 12 22 pF Ci(R) Input capacitance, RAS inputs 8 8 pF Ci(C) Input capacitance, CAS inputs 8 15 pF Ci(W) Input capacitance, W 16 30 pF Co(DQ) Output capacitance on DQ0 – DQ31 8 15 pF NOTE 6: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V. |
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