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TM248NBK36U Datasheet(PDF) 1 Page - Texas Instruments |
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TM248NBK36U Datasheet(HTML) 1 Page - Texas Instruments |
1 / 9 page TM124MBK36F, TM124MBK36U 1048576 BY 36-BIT DRAM MODULE TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE SMMS650A – APRIL 1995 – REVISED JUNE 1995 1 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 D Organization TM124MBK36F ...1048 576 × 36 TM248NBK36F ...2097 152 × 36 D Single 5-V Power Supply (±10% Tolerance) D 72-Pin Single-In-Line Memory Module (SIMM) for Use With Socket D TM124MBK36F – Utilizes Two 16-Megabit and One 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages D TM248NBK36F – Utilizes Four 16-Megabit and Two 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages D Long Refresh Period...16 ms (1024 Cycles) D All Inputs, Outputs, Clocks Fully TTL Compatible D 3-State Output D Common CAS Control for Nine Common Data-In and Data-Out Lines in Four Blocks D Enhanced Page-Mode Operation With CAS-Before-RAS ( CBR ), RAS-Only, and Hidden Refresh D Presence Detect D Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR tRAC tAA tCAC WRITE CYCLE (MAX) (MAX) (MAX) (MIN) ’124MBK36F-60 60 ns 30 ns 15 ns 110 ns ’124MBK36F-70 70 ns 35 ns 18 ns 130 ns ’124MBK36F-80 80 ns 40 ns 20 ns 150 ns ’248NBK36F-60 60 ns 30 ns 15 ns 110 ns ’248NBK36F-70 70 ns 35 ns 18 ns 130 ns ’248NBK36F-80 80 ns 40 ns 20 ns 150 ns D Low Power Dissipation D Operating Free-Air Temperature Range: 0 °C to 70°C D Gold-Tabbed Versions Available:† – TM124MBK36F – TM248NBK36F D Tin-Lead (Solder) Tabbed Versions Available: – TM124MBK36U – TM248NBK36U description TM124MBK36F The TM124MBK36F is a 4-MByte dynamic random-access memory (DRAM) organized as four times 1 048 576 × 9 in a 72-pin single-in-line memory module (SIMM). The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit dynamic RAMs, each in a 42-lead plastic small-outline J-lead (SOJ) package and one TMS44460DJ, 1 048 576 × 4-bit DRAM in a 24/26-lead plastic small-outline J-lead (SOJ) package mounted on a substrate with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets, respectively. The TM124MBK36F SIMM is available in the single-sided BK leadless module for use with sockets. TM248NBK36F The TM248NBK36F is an 8-MByte DRAM organized as four times 2 097 152 × 9 in a 72-pin single-in-line memory module (SIMM). The SIMM is composed of four TMS418160DZ, 1 048 576 × 16-bit dynamic RAMs, each in a 42-lead plastic small-outline J-lead ( SOJ ) package and two TMS44460DJ, 1 048 576 × 4-bit DRAMs, each in a 24 / 26-lead plastic small-outline (SOJ) package mounted on a substrate with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets, respectively. The TM248NBK36F SIMM is available in the double-sided BK leadless module for use with sockets. operation The TM124MBK36F operates as two TMS418160DZs and one TMS44460DJ connected as shown in the functional block diagram and NO TAG. The TM248NBK36F operates as four TMS418160DZs and two TMS44460DJs connected as shown in the functional block diagram and NO TAG. The common I / O feature dictates the use of early write cycles to prevent contention on D and Q. † Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1995, Texas Instruments Incorporated |
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