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TM893GBK32H-60 Datasheet(PDF) 7 Page - Texas Instruments |
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TM893GBK32H-60 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 13 page TM497FBK32H, TM497FBK32I 4194304 BY 32BIT TM893GBK32H, TM893GBK32I 8388608 BY 32BIT EXTENDEDDATAOUT DYNAMIC RAM MODULES SMMS674A − MARCH 1997 − REVISED SEPTEMBER 1997 7 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS† ’893GBK32H / I-50 ’893GBK32H / I-60 ’893GBK32H / I-70 UNIT PARAMETER TEST CONDITIONS† MIN MAX MIN MAX MIN MAX UNIT VOH High-level output voltage IOH = − 5 mA 2.4 2.4 2.4 V VOL Low-level output voltage IOL = 4.2 mA 0.4 0.4 0.4 V II Input current (leakage) VCC = 5.5 V, VI = 0 V to 6.5 V, All others = 0 V to VCC ± 20 ± 20 ± 20 µA IO Output current (leakage) VCC = 5.5 V, VO = 0 V to VCC, CASx high ± 20 ± 20 ± 20 µA ICC1 Read- or write-cycle current (see Note 3) VCC = 5.5 V, Minimum cycle 1056 896 816 mA ICC2 Standby current VIH = 2.4 V (TTL), After one memory cycle, RASx and CASx high 32 32 32 mA ICC2 Standby current VIH = VCC − 0.2 V (CMOS), After one memory cycle, RASx and CASx high 16 16 16 mA ICC3 Average refresh current (RAS only or CBR) (see Note 3) VCC = 5.5 V, RASx cycling, (RASx only); Minimum cycle CASx low (CBR) CASx high RASx low after 2080 1760 1600 mA ICC4 Average page current (see Note 4) VCC = 5.5 V, tPC = MIN, RASx low, CASx cycling 1760 1440 1280 mA † For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions. NOTES: 3. Measured with a maximum of one address change while RAS = VIL 4. Measured with a maximum of one address change while CAS = VIH capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz (see Note 5) PARAMETER TM497FBK32H / I TM893GBK32H / I UNIT PARAMETER MIN MAX MIN MAX UNIT Ci(A) Input capacitance, address inputs 50 80 pF Ci(R) Input capacitance, RAS inputs 28 33 pF Ci(C) Input capacitance, CAS inputs 17 28 pF Ci(W) Input capacitance, write-enable input 66 112 pF Co(DQ) Output capacitance on DQ pins 9 14 pF NOTE 5: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V. |
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