TM497BBK32H, TM497BBK32I 4194304 BY 32-BIT

TM893CBK32H, TM893CBK32I 8388608 BY 32-BIT

DYNAMIC RAM MODULES

SMMS675A – MARCH 1997 – REVISED APRIL 1997

1

POST OFFICE BOX 1443

– TM497BBK32H / I: 4 194 304 x 32

– TM893CBK32H / I: 8 388 608 x 32

(SIMM) for Use With Sockets

Dynamic Random-Access Memory (DRAM)

Devices in Plastic Small-Outline J-Lead

(SOJ) Packages

DRAMs in Plastic SOJ Packages

32 ms (2 048 Cycles)

TTL-Compatible

Data-In and Data-Out Lines in Four Blocks

CAS-Before-RAS ( CBR ), RAS-Only, and

Hidden Refresh

ACCESS ACCESS ACCESS

READ

TIME

TIME

TIME

OR

tRAC

tAA

tCAC

WRITE

CYCLE

(MAX)

(MAX)

(MAX)

(MIN)

’497BBK32H / I-50 50 ns

25 ns

13 ns

90 ns

’497BBK32H / I-60 60 ns

30 ns

15 ns

110 ns

’497BBK32H / I-70 70 ns

35 ns

18 ns

130 ns

’893CBK32H / I-50 50 ns

25 ns

13 ns

90 ns

’893CBK32H / I-60 60 ns

30 ns

15 ns

110 ns

’893CBK32H / I-70 70 ns

35 ns

18 ns

130 ns

0

°C to 70°C

TM497BBK32H, TM893CBK32H

Available: TM497BBK32I, TM893CBK32I

description

The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4

×

4 194 304

× 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight

TMS417400ADJ, 4 194 304

× 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages

mounted on a substrate with decoupling capacitors. The TMS417400ADJ is described in the TMS417400A data

sheet (literature number SMKS889).

The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The

TM497BBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation

from 0

°C to 70°C.

The TM893CBK32H / I is a 32M-byte DRAM organized as 4

8 388 608

× 8 bits in a 72-pin leadless SIMM. The

SIMM is composed of sixteen TMS417400ADJ, 4 194 304

× 4-bit DRAMs.

The TM893CBK32H / I SIMM is available in the double-sided BK leadless module for use with sockets. The

TM893CBK32H/ I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation

from 0

°C to 70°C.

operation

The TM497BBK32H / I operates as eight TMS417400ADJs connected as shown in the functional block diagram

and in Table 1. The common I/O feature dictates the use of early write cycles to prevent contention on D and

Q.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

† Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

Copyright

© 1997, Texas Instruments Incorporated