TM4100EAD9

4194304 BY 9-BIT

DYNAMIC RAM MODULE

SMMS419C – NOVEMBER 1991 – REVISED JUNE 1995

1

POST OFFICE BOX 1443

(SIMM) for Use With Sockets

Plastic Small-Outline J-Lead Packages

(SOJs)

16 ms (1024 Cycles)

Compatible

ACCESS ACCESS ACCESS

READ

TIME

TIME

TIME

OR

(tRAC)(tCAC)

(tAA)

WRITE

CYCLE

(MAX)

(MAX)

(MAX)

(MIN)

’4100EAD9-60 60 ns

15 ns

30 ns

110 ns

’4100EAD9-70 70 ns

18 ns

35 ns

130 ns

’4100EAD9-80 80 ns

20 ns

40 ns

150 ns

Data-In and Data-Out Lines

Pair of Data-In and Data-Out Lines

0

°C to 70°C

description

The TM4100EAD9 is a dynamic random-access

memory module organized as 4 194 304

× 9 [bit

nine (D9, Q9) is generally used for parity and is

controlled by CAS9] in a 30-pin leadless single

in-line memory module (SIMM).

This module is composed of nine TMS44100DJ,

4 194 304

× 1-bit dynamic RAMs (DRAMs) each in

a 20/26-lead plastic small-outline J-lead package

(SOJ) mounted on a substrate with decoupling

capacitors.

The TM4100EAD9 is characterized for operation

from 0

°C to 70°C and is available in the AD

single-sided, leadless module for use with

sockets.

CAS

DQ1

A0

A1

DQ2

A2

A3

DQ3

A4

A5

DQ4

A6

A7

DQ5

A8

A9

A10

DQ6

W

DQ7

NC

DQ8

Q9

RAS

CAS9

D9

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

PIN NOMENCLATURE

A0 –A10

Address Inputs

CAS, CAS9

Column-Address Strobe

DQ1 – DQ8

Data In / Data Out

D9

Data In

NC

No Internal Connection

Q9

Data Out

RAS

Row-Address Strobe

VCC

5-V Supply

VSS

Ground

W

Write Enable

SINGLE IN-LINE MODULE

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PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1995, Texas Instruments Incorporated