TPIC5621L datasheet(8/13 Pages) TI1

Part #	TPIC5621L

Description	SIX-OUTPUT POWER DMOS ARRAY

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TPIC5621L

SIXOUTPUT POWER DMOS ARRAY

SLIS033 − JUNE 1994

8

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

TYPICAL CHARACTERISTICS

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

VSD − Source-to-Drain Voltage − V

CAPACITANCE

vs

DRAIN-TO-SOURCE VOLTAGE

120

80

40

0

160

200

240

04

8

12

16

400

360

320

280

VDS − Drain-to-Source Voltage − V

0.6

0.4

0.2

0.1

1

2

4

6

0.1

10

1

f = 1 MHz

VGS = 0

TJ = 25°C

8

20

24

28

32

36

40

Coss

Crss

Ciss

TJ = − 40°C

TJ = 25°C

TJ = 75°C

TJ = 150°C

TJ = 125°C

VGS = 0

Figure 11

Figure 12

REVERSE RECOVERY TIME

vs

REVERSE di/dt

Reverse di/dt − A/

µs

200

100

50

0

100

200

300

400

500

600

250

150

DRAIN-TO-SOURCE AND GATE-TO-SOURCE VOLTAGE

vs

GATE CHARGE

Qg − Gate Charge − nC

0

0.5

1

1.5

2

2.5

3

3.5

4

30

20

10

0

40

50

60

ID = 0.5 A

TJ = 25°C

See Figure 3

3

2

1

0

4

5

6

VDS = 20 V

VDS = 48 V

VDS = 20 V

VDS = 30 V

Z4, Z5, and Z6

VDS = 48 V

VGS = 0

IS = 0.5 A

TJ = 25°C

See Figure 1

Z1, Z2, and Z3

Figure 13

Figure 14

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