TPS1110, TPS1110Y

SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998

1

POST OFFICE BOX 655303

< 100 nA From 25

°C to 75°C

Package

description

high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing

battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been

greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power

applications. For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel

MOSFETs in small-outline integrated circuit (SOIC) packages. The TPS1110 is characterized for an operating

or in taped and reeled formats. When ordering the tape-and-reel format, add an R suffix to the device type

number (e.g., TPS1110DR).

AVAILABLE OPTIONS

PACKAGED DEVICE†

CHIP FORM

TJ

SMALL OUTLINE

(D)

CHIP FORM

(Y)

–40

°C to 150°C

TPS1110D

TPS1110Y

† The D package is available taped and reeled. Add an R suffix to device

type (e.g., TPS1110DR). The chip form is tested at 25

°C.

schematic

GATE

SOURCE

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Copyright

© 1998, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

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DRAIN

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D PACKAGE

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