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SD05T1 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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SD05T1 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page SD05T1 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 350 Watts IEC 61000−4−2 (ESD) Air Contact ±15 ±8.0 kV IEC 61000−4−4 (EFT) 40 A ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2) VPP 30 kV Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25 °C °PD° 200 1.6 °mW° mW/ °C Thermal Resistance Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *Other voltages may be available upon request. 1. Nonrepetitive current pulse, per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS Device VRWM (V) IR @ VRWM ( mA) VBR, Breakdown Voltage (V) IT mA VC @ IPP = 5 A (Note 3) (V) Max IPP (Note 3) (A) VC @ Max IPP (Note 3) (V) Max Capacitance (pF) Min Max VR = 0 V f = 1.0 MHz SD05T1, G 5.0 10 6.2 7.3 1.0 9.8 24 14.5 350 SD12T1, G 12 1.0 13.3 15.75 1.0 19 15 25 150 3. 8 × 20 ms pulse waveform. |
Similar Part No. - SD05T1_12 |
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Similar Description - SD05T1_12 |
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