ST2304SRG datasheet(1/6 Pages) STANSON

Part #	ST2304SRG

Description	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

Logo

1 / 6 page

ST2304SRG

N Channel Enhancement Mode MOSFET

3.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2304SRG 2005. V1

DESCRIPTION

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2304SRG

SOT-23

04YA

※ Process Code : A ~ Z ; a ~ z

※ ST2304SRG

S : SOT-23 ; R : Tape Reel ; G : Pb – Free

FEATURE

30V/3.2A, RDS(ON) = 44m-ohm (Typ.)

@VGS = 10.0V

30V/2.0A, RDS(ON) = 60m-ohm

@VGS = 4.5V

30V/1.5A, RDS(ON) =90 m-ohm

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

3

1

2

D

G

S

3

1

2

04YA

Similar Part No. - ST2304SRG

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	ST2304SRG	482Kb / 9P	N-Channel 30-V (D-S) MOSFET

More results

Similar Description - ST2304SRG

Manufacturer	Part #	Datasheet	Description
Stanson Technology	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

More results

ST2304SRG Datasheet(PDF) 1 Page - Stanson Technology

ST2304SRG Datasheet(HTML) 1 Page - Stanson Technology

Similar Part No. - ST2304SRG

Similar Description - ST2304SRG

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL