ST2341A datasheet(3/6 Pages) STANSON

Part #	ST2341A

Description	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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ST2341A

P Channel Enhancement Mode MOSFET

-6.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341A 2010. Rev.1

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1.0

-3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

nA

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V,VGS=0V

-1

uA

VDS=-20V,VGS=0V

TJ=55℃

-10

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V

-6

A

Drain-source On-Resistance

RDS(on)

VGS=-10,ID=-6.0A

VGS=-4.5V,ID=-3.8A

0.025

0.035

0.030

0.042

Forward Transconductance

gfs

VDS=-5V,ID=-4V

3.0

S

Diode Forward Voltage

VSD

IS=-1A,VGS=0V

-0.8

-1.2

V

Dynamic

Total Gate Charge

Qg

VDS=-6V

VGS=-4.5V

ID≡-3.3A

8.0

13

nC

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

2.2

Input Capacitance

Ciss

VDS=-6.0V

VGS=0V

F=1MHz

700

pF

Output Capacitance

Coss

160

Reverse Transfer

Capacitance

Crss

120

Turn-On Time

td(on)

tr

VDD=-6V

RL=6Ω

ID=-1.0A

VGEN=-4.5V

RG=6Ω

15

25

nS

35

55

Turn-Off Time

td(off)

tf

60

90

40

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