AFT21S230SR3 AFT21S232SR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 50 watt RF power LDMOS transistors are designed for cellular base

station applications covering the frequency range of 2110 to 2170 MHz.

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

2110 MHz

16.7

30.5

7.2

--35.7

--19

2140 MHz

17.0

31.0

7.1

--35.4

--20

2170 MHz

17.2

31.8

7.0

--34.8

--15

Features

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• NI--780S--6: R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

• NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 18.

Figure 1. Pin Connections

(Top View)

Figure 2. Pin Connections

(Top View)

VBW

N.C.

VBW

16

34

25

N.C.

NI--780S--6

AFT21S230S

NI--780S--2

AFT21S232S

Document Number: AFT21S230S_232S

Rev. 0, 10/2012

Freescale Semiconductor

Technical Data

© Freescale Semiconductor, Inc., 2012. All rights reserved.

2110--2170 MHz, 50 W AVG., 28 V

AFT21S230SR3

AFT21S232SR3

© Freescale Semiconductor, Inc., 2012. All rights reserved.

© Freescale Semiconductor, Inc., 2012. All rights reserved.