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TLMG1100 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TLMG1100 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 15 page TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Rev. 2.2, 20-Jul-12 2 Document Number: 83173 For technical questions, contact: LED@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Driving the LED in reverse direction is suitable for short term application Note (1) Driving the LED in reverse direction is suitable for short term application ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage (1) VR 12 V DC forward current Tamb ≤ 75 °C IF 30 mA Surge forward current tp ≤ 10 μs IFSM 0.5 A Power dissipation PV 90 mW Junction temperature Tj + 120 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature acc. Vischay specification Tsd + 260 °C Thermal resistance junction/ambient mounted on PC board (pad size > 5 mm2)RthJA 480 K/W ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) TLMB1100 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage (1) VR 5V DC forward current Tamb ≤ 60 °C IF 15 mA Surge forward current tp ≤ 10 μs IFSM 0.1 A Power dissipation PV 68 mW Junction temperature Tj + 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature acc. Vischay specification Tsd + 260 °C Thermal resistance junction/ambient mounted on PC board (pad size > 5 mm2)RthJA 480 K/W OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLMS1100, RED PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 20 mA lV 32 63 - mcd Dominant wavelength IF = 20 mA λd 627 633 639 nm Peak wavelength IF = 20 mA λp - 645 - nm Angle of half intensity IF = 20 mA ϕ -± 80 - deg Forward voltage IF = 20 mA VF -2.1 3.0 V Reverse voltage IR = 10 μA VR 6- - V Junction capacitance VR = 0 V, f = 1 MHz Cj -15 - pF OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLMO1100, ORANGE PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 20 mA lV 50 80 - mcd Dominant wavelength IF = 20 mA λd 600 606 609 nm Peak wavelength IF = 20 mA λp - 610 - nm Angle of half intensity IF = 20 mA ϕ -± 80 - deg Forward voltage IF = 20 mA VF -2.1 3.0 V Reverse voltage IR = 10 μA VR 6- - V Junction capacitance VR = 0 V, f = 1 MHz Cj -15 - pF |
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