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RN4981FS Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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RN4981FS Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page RN4981FS 2007-11-01 3 Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 Collector cut-off current ICEO VCE = 20 V, IB = 0 ⎯ ⎯ 500 nA Emitter cut-off current IEBO VEB = 10 V, IC = 0 0.89 ⎯ 1.33 mA DC current gain hFE VCE = 5 V, IC = 10 mA 30 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V Input voltage (ON) VI (ON) VCE = 0.2 V, IC = 5 mA 1.0 ⎯ 2.0 V Input voltage (OFF) VI (OFF) VCE = 5 V, IC = 0.1 mA 0.8 ⎯ 1.5 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF Electrical Characteristics (Ta =25°C) (Q2) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 Collector cut-off current ICEO VCE = −20 V, IB = 0 ⎯ ⎯ −500 nA Emitter cut-off current IEBO VEB = −10 V, IC = 0 −0.89 ⎯ −1.33 mA DC current gain hFE VCE = −5 V, IC = −10 mA 30 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ ⎯ −0.15 V Input voltage (ON) VI (ON) VCE = −0.2 V, IC = −5 mA −1.0 ⎯ −2.0 V Input voltage (OFF) VI (OFF) VCE = −5 V, IC = −0.1 mA −0.8 ⎯ −1.5 V Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Input resistor R1 ⎯ 3.76 4.7 5.64 k Ω Resistor ratio R1/R2 ⎯ 0.8 1.0 1.2 |
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