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RN4987FS Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # RN4987FS
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4987FS Datasheet(HTML) 3 Page - Toshiba Semiconductor

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RN4987FS
2007-11-01
3
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 20 V, IE = 0
100
Collector cut-off current
ICEO
VCE = 20 V, IB = 0
500
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.088
0.131
mA
DC current gain
hFE
VCE = 5 V, IC = 10 mA
120
Collector-emitter saturation voltage
VCE (sat)
IC = 5 mA, IB = 0.25 mA
0.15
V
Input voltage (ON)
VI (ON)
VCE = 0.2 V, IC = 5 mA
0.7
1.5
V
Input voltage (OFF)
VI (OFF)
VCE = 5 V, IC = 0.1 mA
0.5
1.0
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.2
pF
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −20 V, IE = 0
−100
Collector cut-off current
ICEO
VCE = −20 V, IB = 0
−500
nA
Emitter cut-off current
IEBO
VEB = −6 V, IC = 0
−0.088
−0.131
mA
DC current gain
hFE
VCE = −5 V, IC = −10 mA
120
Collector-emitter saturation voltage
VCE (sat)
IC = −5 mA, IB = −0.25 mA
−0.15
V
Input voltage (ON)
VI (ON)
VCE = −0.2 V, IC = −5 mA
−0.7
−1.5
V
Input voltage (OFF)
VI (OFF)
VCE = −5 V, IC = −0.1 mA
−0.5
−1.0
V
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
1.2
pF
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
8
10
12
k
Ω
Resistor ratio
R1/R2
0.17
0.213
0.255


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