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RN4990FS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN4990FS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN4990FS 2007-11-01 1 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4990FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 R1: 4.7k Ω (Q1, Q2 common) Equivalent Circuit (top view) Marking Unit: mm fS6 0.1±0.05 6 0.8±0.05 1.0±0.05 1 2 0.1±0.05 3 5 4 1.EMIITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― JEITA ― TOSHIBA 2-1F1D Weight: 0.001g (typ.) Type name W9 R1 B C E R1 B C E 6 54 1 2 3 Q1 Q2 |
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