IS61WV1288EEBLL-8KLI datasheet(7/16 Pages) ISSI

Part #	IS61WV1288EEBLL-8KLI

Description	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com7

Rev. 00A

10/10/2012

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IS61/64WV1288EEBLL

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)

-8

-10

-20

Symbol

Parameter

Min. Max.

Min.

Max.

Unit

twC

WriteCycleTime

8—

10—

20—

ns

tsCe

CE

toWriteEnd

6.5—

8—

12—

ns

taw

AddressSetupTime

6.5—

8—

12—

ns

toWriteEnd

tha

AddressHoldfromWriteEnd

0—

ns

tsa

AddressSetupTime

0—

ns

tPwe1

WE

PulseWidth

6.5—

8—

12—

ns

tPwe2

WE

PulseWidth(OE=LOW)8.0—

10—

17—

ns

tsd

DataSetuptoWriteEnd

5—

6—

9—

ns

thd

DataHoldfromWriteEnd

0—

ns

thzwe(2)

WE

LOWtoHigh-ZOutput

—3.5

—5

—9

ns

tlzwe(2)

WE

HIGHtoLow-ZOutput

2—

ns

Notes:

1. TestconditionsandoutputloadingconditionsarespecifiedintheACTestConditionsandACTestLoads(Figure1).

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. TheinternalwritetimeisdefinedbytheoverlapofCELOW,andWELOW.Allsignalsmustbeinvalidstatestoinitiatea

Write,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherising

or falling edge of the signal that terminates the write. Shaded area product in development

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