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IS61WV6416DALL Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS61WV6416DALL Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 21 page 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 11/18/2010 IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS, IS64WV6416DBLL/DBLS ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit Vterm TerminalVoltagewithRespecttoGND –0.5toVdd+0.5 V Vdd VddRelatestoGND –0.3to4.0 V tstg StorageTemperature –65to+150 °C Pt PowerDissipation 1.0 W Notes: 1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions abovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolute maximumratingconditionsforextendedperiodsmayaffectreliability. CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit cIn InputCapacitance VIn = 0V 6 pF c I/o Input/OutputCapacitance Vout = 0V 8 pF Notes: 1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters. 2. Testconditions:TA = 25°c, f=1MHz,Vdd=3.3V. |
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